دیتاشیت BSS123W
مشخصات دیتاشیت
| نام دیتاشیت |
BSS123W
|
| حجم فایل |
69.612
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
200mW
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
71pF@25V
-
Continuous Drain Current (Id):
170mA
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@1mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6Ω@170mA,10V
-
Package:
SOT-323-3
-
Manufacturer:
onsemi
-
Type:
N Channel
-
Datasheet:
Yangzhou Yangjie Elec Tech BSS123W
-
Total Gate Charge (Qg@Vgs):
1.61nC@10V
-
Reverse Transfer Capacitance (Crss@Vds):
7pF@50V
